3
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Small Signal S-Parameters vs Frequency of
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD
= 28 V, I
DQ
= 250 mA
Drain Effciency, Power and Gain vs Frequency of the
CGH55030F2 and CGH55030P2 in the CGH55030-TBCGH55030 - GaN HEMT C-Band Performance
Drain Efficiency, Power, and Gain vs FrequencyVDD
= 28 V, I
DQ
= 250 mA
0
2
4
6
8
10
12
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1
Frequency (GHz)
S21 (dB)
-25
-20
-15
-10
-5
0
5
S11 (dB)
S21
S11
4040
50
60
70
D
r
a
i
n
E
f
f
i
c
i
e
n
c
y
(
%
)
,
P
o
w
e
r
(
d
B
m
)
,
G
a
i
n
(
d
B
)
0
10
20
30
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
D
r
a
i
n
E
f
f
i
c
i
e
n
c
y
(
%
)
,
P
o
w
e
r
(
d
B
m
)
,
G
a
i
n
(
d
B
)
Frequency (GHz)
Gain (dB)
Psat (dBm)
Drain Efficiency (%)
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